I-Magnetron sputtering coating iyindlela entsha yokwemboza umhwamuko, uma iqhathaniswa nendlela yangaphambili yokuhwamuka, izinzuzo zayo ezicini eziningi ziphawuleka kakhulu. Njengobuchwepheshe obuvuthiwe, i-magnetron sputtering isetshenziswe emikhakheni eminingi.
Isimiso se-Magnetron sputtering:
Inkambu kazibuthe ye-orthogonal kanye nenkundla kagesi yengezwa phakathi kwesigxobo sethagethi esputtered (i-cathode) kanye ne-anode, futhi igesi ye-inert edingekayo (imvamisa i-Ar gas) igcwaliswa ku-vacuum chamber ephezulu. Umazibuthe unomphela wenza inkambu kazibuthe engu-250-350 gaus ebusweni bento eqondiwe, kanti inkambu ye-orthogonal electromagnetic yakhiwa nenkambu kagesi kagesi ephezulu. Ngaphansi komphumela wenkundla kagesi, i-Ar gas ionization ibe ama-ion nama-electron aqondile, iqondise futhi inokucindezela okuthile okungekuhle, kusukela ekuhlosweni okusuka esigxotsheni ngomthelela wensimu kazibuthe kanye nokukhuphuka kwamathuba e-ionization yegesi esebenzayo, yakha i-plasma ephezulu yokuminyana eduze i-cathode, i-Ar ion ngaphansi kwesenzo se-lorentz force, phuthuma ukundizela endaweni okuqondiswe kuyo, ibhomu endaweni eqondiwe ngesivinini esikhulu, Ama-athomu ahlakazekile kulokho okuqondiwe alandela umgomo wokuguqulwa komfutho futhi undize usuke endaweni okuqondiswe kuyo ngamandla e-kinetic aphezulu uye kufilimu ye-substrate yokubeka.
I-Magnetron sputtering ngokuvamile ihlukaniswe ngezinhlobo ezimbili: i-DC sputtering kanye ne-RF sputtering. Umgomo we-DC sputtering equipment ulula, futhi izinga liyashesha lapho uphafaza insimbi. Ukusetshenziswa kwe-RF sputtering kubanzi kakhulu, ngaphezu kwezinto ezihambisayo ezifafazayo, kodwa futhi nokuphafaza izinto ezingezona u-conductive, kodwa futhi nokulungiselela ukuphalaza okusebenzayo kwama-oxides, ama-nitrides nama-carbides nezinye izinto eziyinhlanganisela. Uma imvamisa ye-RF inyuka, iba yi-microwave sputtering. Njengamanje, i-electron cyclotron resonance (ECR) uhlobo lwe-microwave sputtering lusetshenziswa kakhulu.
Izinto eziqondiswe ku-Magnetron sputtering coating:
Izinto ezihlosiwe ze-Metal sputtering, okokufaka ingxubevange ye-sputtering, okokusebenza kwe-ceramic sputtering, okokusebenza okuqondiwe kwe-boride ceramic sputtering, impahla eqondiwe ye-carbide ceramic sputtering, impahla eqondiwe ye-fluoride ceramic sputtering, izinto ezihlosiwe ze-nitride ceramic sputtering, ithagethi ye-oxide ceramic, i-selenide ceramic sputtering material Izinto ezihlosiwe ze-silicide ceramic sputtering, i-sulfide ceramic okokusebenza okuqondiwe kokuphophotha, ithagethi ye-Telluride ceramic sputtering, enye ithagethi ye-ceramic, ithagethi ye-chromium-doped silicon oxide ceramic (CR-SiO), i-indium phosphide target (InP), i-lead arsenide target (PbAs), i-indium arsenide target (InAs).
Isikhathi sokuthumela: Aug-03-2022