Iyini i-polysilicon target

I-Polysilicon iyisici esibalulekile esihlosiwe sokukhipha amanzi. Ukusebenzisa indlela ye-magnetron sputtering ukulungiselela i-SiO2 namanye amafilimu amancane angenza izinto ze-matrix zibe nokumelana okungcono kwe-optical, i-dielectric kanye nokugqwala, esetshenziswa kakhulu esikrinini sokuthinta, i-optical nezinye izimboni.

Inqubo yokuphonsa amakristalu amade iwukubona ukuqina kokuqondisa kwe-silicon ewuketshezi ukusuka phansi kuye phezulu kancane kancane ngokulawula ngokunembile izinga lokushisa le-heater endaweni eshisayo yesithando somlilo we-ingot kanye nokushabalaliswa kokushisa kwezinto ezishisayo zokushisa, isivinini samakristalu amade sokuqiniswa ngu-0.8~1.2cm/h. Ngesikhathi esifanayo, ohlelweni lokuqiniswa kokuqondisa, umphumela wokuhlukaniswa kwezinto zensimbi ezintweni ze-silicon ungabonakala, iningi lezakhi zensimbi zingahlanzwa, futhi isakhiwo sokusanhlamvu se-silicon ye-polycrystalline singenziwa.

I-polysilicon yokusakaza nayo idinga ukwenziwa ngamabomu enqubweni yokukhiqiza, ukuze kuguqulwe ukugcwala kokungcola okwamukelekayo ekuncibilikeni kwe-silicon. I-dopant eyinhloko ye-p-type cast polysilicon embonini i-silicon boron master alloy, lapho okuqukethwe kwe-boron cishe ku-0.025%. Inani le-doping linqunywa ukuphikiswa okuhlosiwe kwe-silicon wafer. Ukumelana okuphezulu ngu-0.02 ~ 0.05 Ω • cm, futhi ukugxiliswa kwe-boron okuhambisanayo cishe ku-2 × 1014cm-3. Nokho, i-coefficient yokuhlukanisa ye-boron ku-silicon ingu-0.8, ezobonisa umphumela othile wokuhlukanisa enqubweni yokuqinisa isiqondiso, lokho okungukuthi, isakhi se-boron sisatshalaliswa ku-gradient ohlangothini oluqondile lwe-ingot, futhi ukumelana kancane kancane. iyancipha ukusuka phansi ukuya phezulu kwe-ingot.