Ifilimu elincanyana ekuhlosweni okuboshwe kuyisimo esikhethekile sempahla. Ngasohlangothini oluthile logqinsi, isikali sincane kakhulu, okuyinani elilinganisekayo le-microscopic. Ngaphezu kwalokho, ngenxa yokubukeka nokuxhumana kokuqina kwefilimu, ukuqhubeka kwezinto ezibonakalayo kuyaphela, okwenza idatha yefilimu nedatha eqondiwe ibe nezindawo ezivamile ezihlukene.Futhi okuhlosiwe ikakhulukazi ukusetshenziswa kwe-magnetron sputtering coating, umhleli we-Beijing Richmat uzosithatha ukuba siqonde. isimiso kanye namakhono sputtering enamathela.
一、 Isimiso sokugcotshwa kwe-sputtering
Ikhono le-Sputtering coating liwukusebenzisa ukubukeka kwethagethi ye-ion shelling, ama-athomu okuqondiwe ashaywa aphume kwinto eyaziwa ngokuthi i-sputtering. Ama-athomu afakwe phezu kwe-substrate abizwa ngokuthi i-sputtering coating. Ngokuvamile, i-ionization yegesi ikhiqizwa ngokukhipha igesi, futhi ama-ion aqondile aqhuma i-cathode target ngesivinini esikhulu ngaphansi kwesenzo senkundla kagesi, eshaya ama-athomu noma ama-molecule e-cathode. i-cathode target, futhi indizela phezu kwe-substrate ezofakwa efilimini. Kalula nje, ukusebenzisa i-sputtering coating ukukhishwa kokukhanya kwegesi okuphansi kwe-inert ukukhiqiza ama-ion.
Ngokuvamile, umshini wokucwebeza wefilimu ufakwe ama-electrode amabili endaweni yokukhipha i-vacuum, futhi i-cathode target yakhiwe idatha yokumboza. Igumbi le-vacuum ligcwele igesi ye-argon enengcindezi engu-0.1~10Pa. Ukukhishwa kokukhanya kwenzeka ku-cathode ngaphansi kwesenzo sevoltheji ephezulu enegethivu engu-1~3kV dc noma i-rf voltage engu-13.56mhz.Ama-ion e-Argon aqhumisa indawo okuqondiwe futhi abangele ukuthi ama-athomu ahlosiwe anqwabelene ku-substrate.
二、 Izici zamakhono e-Sputtering enamathela
1, Isivinini sokupakisha esisheshayo
Umehluko phakathi kwe-electrode ye-sputtering ye-magnetron enesivinini esikhulu kanye ne-electrode yokuphalaza yesiteji ezimbili ukuthi uzibuthe uhlelwe ngaphansi kwethagethi, ngakho indawo kazibuthe evaliwe engalingani yenzeka endaweni eqondiwe.Amandla e-lorentz kuma-electron aqonde maphakathi. yensimu kazibuthe heterogeneous. Ngenxa yomphumela wokugxila, ama-electron aphunyuka kancane. I-heterogeneous magnetic field izungeza indawo okuhlosiwe, futhi ama-electron esibili abanjwe endaweni kazibuthe ene-heterogeneous ashayisana nama-molecule egesi ngokuphindaphindiwe, okuthuthukisa izinga eliphezulu lokuguqulwa kwama-molecule egesi.Ngakho-ke, isivinini esikhulu se-magnetron sputtering sisebenzisa amandla amancane, kodwa ingathola ukusebenza kahle kwe-coating, enezici ezinhle zokukhipha.
2, Izinga lokushisa le-substrate liphansi
Isivinini esikhulu se-magnetron sputtering, eyaziwa nangokuthi i-sputtering yokushisa ephansi. Isizathu siwukuthi idivayisi isebenzisa okuphumayo endaweni yezinkambu ze-electromagnetic eziqondile komunye nomunye. Ama-electron esibili avela ngaphandle kwethagethi, kwelinye. Ngaphansi kwesenzo senkambu kazibuthe kagesi eqondile, iboshelwa eduze kwendawo okuqondiwe kuyo futhi ihambe eduze komzila wendiza emugqeni oyindilinga, ishaya kaningi kuma-molecule egesi ukuze i-ionize ama-molecule egesi. Ndawonye, ama-electron ngokwawo kancane kancane alahlekelwa amandla awo, ngokusebenzisa amaqhuqhuva aphindaphindayo, kuze kube yilapho amandla awo acishe aphele ngokuphelele ngaphambi kokuba abaleke endaweni eqondiwe eduze kwe-substrate. Ngenxa yokuthi amandla ama-electron aphansi kakhulu, izinga lokushisa lethagethi alikhuphuki kakhulu. Lokho kwanele ukulwa nokukhuphuka kwezinga lokushisa kwe-substrate okubangelwa ukuqhuma kwe-electron yamandla aphezulu kweshothi evamile ye-diode, eqedela ukucryogenization.
3, Uhlu olubanzi lwezakhiwo zolwelwesi
Isakhiwo samafilimu azacile atholwe ngokuhwamuka kwevacuum kanye nokufakwa komjovo sihluke kakhulu kuleso esitholakala ngokuncipha kwenqwaba yezinto eziqinile. Ngokungafani nezinto eziqinile ezikhona ngokuvamile, ezihlukaniswa njengesakhiwo esifanayo ngobukhulu obuthathu, amafilimu afakwe esigabeni segesi ahlukaniswa njengezakhiwo ezihlukene. Ukukhula kwekholomu yefilimu kubangelwa indawo yokuqala ye-convex ye-substrate kanye nezithunzi ezimbalwa ezingxenyeni ezivelele ze-substrate. Kodwa-ke, ukuma nobukhulu bekholomu kuhluke kakhulu ngenxa yezinga lokushisa le-substrate, ukuhlakazeka okungaphezulu kwama-athomu anqwabelene, ukungcwatshwa kwama-athomu okungcola kanye ne-Angle yesigameko yama-athomu esigameko ngokuhlobene nendawo engaphansi. Ebangeni lokushisa elidlulele, ifilimu encane inesakhiwo esine-fibrous, ukuminyana okuphezulu, okwakhiwe ngamakristalu amahle wekholomu, okuyisakhiwo esiyingqayizivele sefilimu e-sputtering.
Ukucindezela kwe-sputtering kanye nesivinini sokupakisha ifilimu nakho kuthinta ukwakheka kwefilimu. Ngenxa yokuthi ama-molecule egesi anomphumela wokucindezela ukuhlakazeka kwama-athomu ebusweni be-substrate, umphumela wengcindezi ephezulu yokufafaza ufanelekile ukwehla kwezinga lokushisa kwe-substrate kumodeli. Ngakho-ke, amafilimu ane-porous aqukethe okusanhlamvu okuhle angatholakala ngengcindezi ephezulu ye-sputtering. Le filimu encane yosayizi wokusanhlamvu ifanele ukugcotshwa, ukumelana nokugqoka, ukuqina kwendawo kanye nezinye izinhlelo zokusebenza zemishini.
4. Hlela ukwakheka ngokulinganayo
Izinhlanganisela, izingxube, ama-alloys, njll., okunzima ngokufanelekile ukugcotshwa ukuhwamuka kwevacuum ngenxa yokuthi izingcindezi zomhwamuko wezingxenye zihlukile noma ngenxa yokuthi ziyahluka lapho zishiselwa.Indlela yokumboza iwukuba wenze ungqimba olungaphezulu oluhlosiwe lwe-athomu lugqinsi ngongqimba. ku-substrate, ngalo mqondo kuyikhono eliphelele kakhulu lokwenza ifilimu. Zonke izinhlobo zezinto zingasetshenziswa ekukhiqizeni ukunamathela ezimbonini ngokufaka i-sputtering.
Isikhathi sokuthumela: Apr-29-2022