Mayelana nokusetshenziswa kanye nesimiso sobuchwepheshe be-sputtering target, amanye amakhasimende axhumane ne-RSM, manje ngale nkinga ekhathazeke kakhulu ngayo, ochwepheshe bezobuchwepheshe babelana ngolwazi oluthile oluhlobene.
Isicelo sethagethi ye-Sputtering:
Izinhlayiya ezishajayo (njengama-argon ion) zibhomuza indawo eqinile, ebangela izinhlayiya ezingaphezulu, njengama-athomu, ama-molecule noma izinyanda ukuba ziphume endaweni yento ebizwa ngokuthi “i-sputtering”. Ku-magnetron sputtering coating, ama-ion alungile akhiqizwa i-argon ionization ngokuvamile asetshenziselwa ukubhomba okuqinile (okuhlosiwe), futhi ama-athomu aphakathi nendawo ahlutshiwe afakwa ku-substrate (workpiece) ukuze akhe ungqimba lwefilimu. I-Magnetron sputtering coating inezici ezimbili: "ukushisa okuphansi" kanye "nokushesha".
Isimiso se-Magnetron sputtering:
Inkambu kazibuthe ye-orthogonal kanye nenkundla kagesi yengezwa phakathi kwesigxobo sethagethi esputtered (i-cathode) kanye ne-anode, futhi igesi ye-inert edingekayo (imvamisa i-Ar gas) igcwaliswa ku-vacuum chamber ephezulu. Uzibuthe ongunaphakade wenza inkambu kazibuthe engu-250-350 Gauss ebusweni bento eqondiwe, futhi yakhe inkambu ye-orthogonal kagesi enenkambu kagesi yamandla aphezulu.
Ngaphansi kwesenzo senkundla kagesi, i-Ar gas ifakwa i-ioni ibe ama-ion nama-electron aqondile, futhi kukhona ukucindezela okuphezulu okunegethivu okuthile kulokho okuhlosiwe, ngakho-ke ama-electron aphuma esigxotsheni esiqondiwe athintwa insimu kazibuthe kanye namathuba e-ionization okusebenza. igesi iyanda. I-plasma enokuminyana okuphezulu iyakhiwa eduze kwe-cathode, futhi ama-Ar ions ashesha aye endaweni okuqondiswe kuyo ngaphansi kwesenzo samandla ka-Lorentz futhi aqhumise indawo okuqondiwe kuyo ngesivinini esikhulu, ukuze ama-athomu ahlakazekile endaweni eqondiwe aphume endaweni eqondiwe ngokuphezulu. amandla kinetic futhi undizele ku-substrate ukuze wenze ifilimu ngokuvumelana nesimiso sokuguqulwa komfutho.
I-Magnetron sputtering ngokuvamile ihlukaniswe ngezinhlobo ezimbili: i-DC sputtering kanye ne-RF sputtering. Umgomo we-DC sputtering equipment ulula, futhi izinga liyashesha lapho uphafaza insimbi. Ukusetshenziswa kwe-RF sputtering kubanzi kakhulu, ngaphezu kwezinto ezihambisayo ezifafazayo, kodwa futhi nokuphafaza izinto ezingezona u-conductive, kodwa futhi nokulungiselela ukuphalaza okusebenzayo kwama-oxides, ama-nitrides nama-carbides nezinye izinto eziyinhlanganisela. Uma imvamisa ye-RF inyuka, iba yi-microwave sputtering. Njengamanje, i-electron cyclotron resonance (ECR) uhlobo lwe-microwave sputtering lusetshenziswa kakhulu.
Isikhathi sokuthumela: Aug-01-2022