Ngokuthuthukiswa kwamazinga okuphila abantu kanye nokuthuthuka okuqhubekayo kwesayensi nobuchwepheshe, abantu banezidingo eziphakeme neziphakeme zokusebenza kwemikhiqizo yokumboza imihlobiso engagugi, ekwazi ukumelana nokugqwala kanye nokumelana nezinga lokushisa eliphezulu. Yiqiniso, ukugqoka kungabuye kuhlobise umbala walezi zinto. Manje-ke, uyini umehluko phakathi kokwelashwa kwethagethi ye-electroplating kanye nethagethi ye-sputtering? Vumela ochwepheshe boMnyango Wezobuchwepheshe we-RSM bakuchazele yona.
Electroplating target
Umgomo we-electroplating uyahambisana nalowo we-electrolytic refining yethusi. Lapho i-electroplating, i-electrolyte equkethe ama-ion ensimbi wesendlalelo sokucwebeza ngokuvamile isetshenziselwa ukulungisa isisombululo sokucwenga; Ukucwilisa umkhiqizo wensimbi ozofakwa kusisombululo sokucwenga bese uwuxhuma nge-electrode engalungile ye-DC power supply njenge-cathode; Insimbi eboshiwe isetshenziswa njenge-anode futhi ixhunywe ku-electrode enhle ye-DC power supply. Lapho kusetshenziswa i-low-voltage DC current, insimbi ye-anode iyancibilika esixazululweni bese iba i-cation bese ithuthela ku-cathode. Lawa ma-ion athola ama-electron ku-cathode futhi ancishiswa abe yinsimbi, embozwe emikhiqizweni yensimbi ezogqitshwa.
I-Sputtering Target
Umgomo ngokuyinhloko uwukusebenzisa ukukhishwa okukhanyayo ukuze kuqhunyiswe ama-argon ion endaweni okuqondiwe kuyo, futhi ama-athomu ethagethi ayakhishwa futhi afakwe endaweni engaphansi ukuze enze ifilimu elincanyana. Izakhiwo nokufana kwamafilimu ashaqiwe kungcono kunalawo amafilimu afakwe umhwamuko, kodwa isivinini sokubeka sihamba kancane kunaleso samafilimu afakwe umhwamuko. Imishini emisha yokufafaza icishe isebenzisa odonsa abaqinile kuma-electron asonge ukuze kusheshiswe i-ionization ye-argon endaweni okuhlosiwe, okwandisa amathuba okushayisana phakathi kwethagethi nama-argon ions futhi kuthuthukise izinga lokufafaza. Iningi lamafilimu ensimbi ayi-DC sputtering, kuyilapho izinto ezingezona ze-ceramic kazibuthe ziyi-RF AC sputtering. Isimiso esiyisisekelo siwukusebenzisa ukukhipha okukhanyayo ku-vacuum ukuze kuqhume ingaphezulu lethagethi ngama-argon ions. Ama-cations ku-plasma azosheshisa ukuphuthuma endaweni engalungile ye-electrode njengento efafaziwe. Lokhu kuqhuma kuzokwenza into ehlosiwe indize iphume futhi ifake ku-substrate ukuze kwakhe ifilimu elincanyana.
Imibandela yokukhetha yezinto eziqondiwe
(1) Okuhlosiwe kufanele kube namandla amahle emishini nokuzinza kwamakhemikhali ngemva kokwakhiwa kwefilimu;
(2) Into yefilimu yefilimu yokufafaza esabelayo kufanele kube lula ukwenza ifilimu eyinhlanganisela negesi yokusabela;
(3) Okuhlosiwe kanye ne-substrate kufanele kuhlanganiswe ngokuqinile, ngaphandle kwalokho, impahla yefilimu enamandla abophezelayo ne-substrate izokwamukelwa, futhi ifilimu engezansi kufanele ifafazwe kuqala, bese ungqimba lwefilimu oludingekayo luzolungiswa;
(4) Ngokwesisekelo sokuhlangabezana nezidingo zokusebenza kwefilimu, umehluko omncane phakathi kwe-thermal coefficient yokunwetshwa kwethagethi kanye ne-substrate, ungcono, ukuze kuncishiswe ithonya lokucindezelwa okushisayo kwefilimu efafaziwe;
(5) Ngokwezidingo zokusetshenziswa nokusebenza kwefilimu, okuhlosiwe okusetshenzisiwe kufanele kuhlangabezane nezidingo zobuchwepheshe zokuhlanzeka, okuqukethwe okungcolile, ukufana kwengxenye, ukunemba komshini, njll.
Isikhathi sokuthumela: Aug-12-2022