Ithagethi inemisebenzi emininzi kunye nezicelo ezibanzi kwiinkalo ezininzi. Isixhobo esitsha sokutshiza phantse sisebenzisa iimagnethi ezinamandla ukujikeleza ii-electron ukukhawulezisa i-ionization ye-argon malunga nokujoliswe kuko, okwandisa amathuba okungqubana phakathi kokujoliswe kuko kunye nee-argon ion,
Yandisa izinga lokutshiza. Ngokubanzi, i-DC sputtering isetyenziselwa ukutyabeka ngesinyithi, ngelixa ukutshiza konxibelelwano lwe-RF kusetyenziswa izixhobo ezingezizo zokuqhuba ze-ceramic magnetic. Umgaqo osisiseko kukusebenzisa ukukhutshwa okukhanyayo ukubetha i-argon (AR) ion kumphezulu wethagethi kwi-vacuum, kwaye ii-cations kwiplasma ziya kukhawulezisa ukungxama ukuya kumphezulu we-electrode engalunganga njengesixhobo esichaziweyo. Le mpembelelo iya kwenza ukuba izinto ekujoliswe kuzo ziphume kwaye zifake kwi-substrate ukwenza ifilimu.
Ngokubanzi, kukho izinto ezininzi zokugquma ifilimu usebenzisa inkqubo yokutshiza:
(1) Isinyithi, i-alloy okanye i-insulator ingenziwa kwidatha yefilimu encinci.
(2) Ngaphantsi kweemeko ezifanelekileyo zokumisela, ifilimu enokwakheka okufanayo inokwenziwa kwiithagethi ezininzi kunye neziphazamisekileyo.
(3) Umxube okanye i-compound ye-target material kunye ne-molecule yegesi inokwenziwa ngokudibanisa i-oksijini okanye ezinye iigesi ezisebenzayo kwi-atmosphere yokukhupha.
(4) Igalelo ekujoliswe kulo ngoku kunye nexesha lokutshiza liyakwazi ukulawulwa, kwaye kulula ukufumana ubukhulu befilimu obuchanekileyo.
(5) Iluncedo ekuvelisweni kwezinye iifilimu.
(6) Iinqununu ezitshisiweyo azichatshazelwa nzima ngumxhuzulane, kwaye ithagethi kunye ne-substrate inokulungiswa ngokukhululekileyo.
Ixesha lokuposa: May-24-2022