Ukugquma kwevacuum kubhekiselele ekufudumezeni nasekukhupheni umphunga umthombo wokufunxa okanye ukufafaza ngebhombu ye-ion ekhawulezileyo, kwaye uyifake kumphezulu wesubstrate ukwenza umaleko omnye okanye ifilimu yomaleko amaninzi. Uthini umgaqo wokugquma ivacuum? Okulandelayo, umhleli we-RSM uyakusazisa.
1. Ukugquma komphunga
Ukwaleka komphunga kufuna ukuba umgama phakathi kweemolekyuli zomphunga okanye iiathom ezisuka kumthombo womphunga kunye nesubstrate eza kugqunywa kufuneka ube ngaphantsi komndilili wendlela ekhululekileyo yeemolekyuli zerhasi ezishiyekileyo kwigumbi lokugquma, ukuze kuqinisekiswe ukuba iimolekyuli zomphunga zombane. Ukuvela komphunga kunokufikelela kumphezulu we-substrate ngaphandle kokungqubana. Qinisekisa ukuba ifilimu ihlambulukile kwaye iqinile, kwaye i-evaporation ayiyi ku-oxidize.
2. Ukugquma kwe-vacuum sputtering
Kwi-vacuum, xa ii-ion ezikhawulezayo zingqubana nesiqina, kwelinye icala, ikristale yonakalisiwe, kwelinye icala, ingqubana neeathom ezenza ikristale, kwaye ekugqibeleni iiathomu okanye iimolekyuli eziphezu komhlaba oqinileyo. fafaza ngaphandle. Izinto ezitshisiweyo zifakwe kwi-substrate ukwenza ifilimu encinci, ebizwa ngokuba yi-vacuum sputter plating. Kukho iindlela ezininzi zokutshiza, phakathi kwazo ukutshiza kwe-diode yeyona ndlela yokuqala. Ngokweethagethi ezahlukeneyo ze-cathode, inokwahlulwa ibe yi-direct current (DC) kunye ne-high frequency (RF). Inani leathom ezisasazwe ngokuchaphazela indawo ekujoliswe kuyo nge-ion libizwa ngokuba yi-sputtering rate. Ngesantya esiphezulu se-sputtering, isantya sokwenza ifilimu sikhawuleza. Isantya sokutshiza sinxulumene namandla kunye nodidi lwee-ion kunye nohlobo lwemathiriyeli ekujoliswe kuyo. Ngokuqhelekileyo, izinga lokutshiza liyenyuka ngokunyuka kwamandla e-ion yabantu, kwaye isantya sokutshiza kweentsimbi ezixabisekileyo siphezulu.
Ixesha lokuposa: Jul-14-2022