Ngokuphucuka kwemigangatho yokuphila kwabantu kunye nophuhliso oluqhubekayo lwesayensi kunye nethekhinoloji, abantu banemfuno ephezulu nangaphezulu yokusebenza kwemveliso yokugquma, ukumelana nokugqwala kunye nobushushu obuphezulu obuxhathisayo. Ngokuqinisekileyo, ukugquma kunokuhombisa nombala wezi zinto. Ke, yintoni umahluko phakathi kokunyangwa kwethagethi ye-electroplating kunye nethagethi ye-sputtering? Vumela iingcali zeSebe leTekhnoloji le-RSM zikucacisele.
Electroplating target
Umgaqo we-electroplating uhambelana nobhedu olusulungekileyo lwe-electrolytic. Xa i-electroplating, i-electrolyte equkethe ii-ion zetsimbi ze-plating layer isetyenziselwa ukulungisa isisombululo sokucoca; Ukuntywiliselwa kwemveliso yesinyithi ukuba ifakwe kwisisombululo sokutya kwaye idibanise ne-electrode engalunganga yonikezelo lwamandla lwe-DC njenge-cathode; Intsimbi egqunyiweyo isetyenziswa njenge-anode kwaye iqhagamshelwe kwi-electrode elungileyo yonikezelo lwamandla lweDC. Xa i-low-voltage ye-DC isetyenzisiweyo, i-anode yesinyithi iyayinyibilika kwisisombululo kwaye ibe yi-cation kwaye ihambela kwi-cathode. Ezi ion zifumana i-electron kwi-cathode kwaye ziyancipha zibe yintsimbi, egqunywe kwiimveliso zetsimbi eziza kucandwa.
Ithagethi yokuSputtering
Umgaqo ikakhulu kukusebenzisa ukukhutshwa okukhazimlayo ukubhobhoza i-argon ion kumphezulu ekujoliswe kuwo, kwaye iiathom zethagethi ziyakhutshwa kwaye zifakwe kumphezulu wesubstrate ukwenza ifilim ebhityileyo. Iipropati kunye nokufana kweefilimu ezitshiziweyo zingcono kunezo zeefilimu ezifakwe ngumphunga, kodwa isantya sokubeka sicotha kakhulu kuneso samafilimu afakwe ngumphunga. Isixhobo esitsha sokutshiza phantse sisebenzisa iimagnethi ezinamandla kwi-elektroni ezijikelezayo ukukhawulezisa i-ionization ye-argon kwindawo ekujoliswe kuyo, nto leyo eyandisa amathuba okungqubana phakathi kokujoliswe kuko kunye ne-argon ion kunye nokuphucula izinga lokutshiza. Uninzi lweefilim zentsimbi zokucwenga zi-DC sputtering, ngelixa izixhobo ze-ceramic ezingasebenziyo zisebenza nge-RF AC sputtering. Umgaqo osisiseko kukusebenzisa ukukhutshwa okukhanyayo kwi-vacuum ukubhobhoza indawo ekujoliswe kuyo ngeeoni ze-argon. Iications kwiplasma ziya kukhawulezisa ukungxama ukuya kwindawo engalunganga ye-electrode njengezinto ezifafaziweyo. Le bombardment iya kwenza ukuba izinto ezijoliswe kuzo zibhabha kwaye zifake kwi-substrate ukwenza ifilimu encinci.
Iikhrayitheriya zokukhetha izinto ekujoliswe kuzo
(1) Ithagethi kufuneka ibe namandla omatshini kunye nokuzinza kweekhemikhali emva kokwenziwa kwefilimu;
(2) Imathiriyeli yefilim yefilimu yokutshiza esebenzayo kufuneka kube lula ukwenza ifilimu edibeneyo kunye nerhasi yokusabela;
(3) Ithagethi kunye ne-substrate kufuneka zidityaniswe ngokuqinileyo, kungenjalo, imathiriyeli yefilimu enamandla okubopha okulungileyo kunye ne-substrate iya kwamkelwa, kwaye ifilimu engaphantsi iya kuchithwa kuqala, kwaye emva koko umaleko wefilimu ofunekayo uya kulungiswa;
(4) Kwisiseko sokuhlangabezana neemfuno zefilimu, umncinci umehluko phakathi kwe-thermal coefficient yokwandiswa kwethagethi kunye ne-substrate, ngcono, ukuze kuncitshiswe impembelelo yoxinzelelo lwe-thermal yefilimu ephothiweyo;
(5) Ngokwesicelo kunye neemfuno zentsebenzo yefilimu, ithagethi esetyenzisiweyo kufuneka ihlangabezane neemfuno zobugcisa zokucoceka, umxholo wokungcola, ukufana kwecandelo, ukuchaneka komatshini, njl.
Ixesha lokuposa: Aug-12-2022