Njengoko sonke sisazi, indlela yophuhliso lwetekhnoloji yezinto ekujoliswe kuyo inxulumene ngokusondeleyo kwindlela yophuhliso lobugcisa befilimu kwishishini lesicelo esisezantsi. Ngokuphuculwa kweteknoloji yeemveliso zefilimu okanye amacandelo kwishishini lesicelo, iteknoloji ekujoliswe kuyo kufuneka itshintshe. Ngokomzekelo, abavelisi be-Ic basandul 'ukugxila ekuphuhliseni i-wireless resistivity copper wiring, ekulindeleke ukuba ithathe indawo enkulu yefilimu ye-aluminium yasekuqaleni kwiminyaka embalwa ezayo, ngoko ke ukuphuhliswa kweethagethi zethusi kunye neenjongo zabo ezifunekayo zokuthintela ziya kukhawuleza.
Ukongezelela, kwiminyaka yakutshanje, i-flat panel display (FPD) ithathe indawo enkulu ye-cathode-ray tube (CRT) -esekelwe kwikhompyutheni yekhompyutheni kunye nemarike yethelevishini. Iyakwandisa kakhulu imfuno yobugcisa kunye nentengiso yeethagethi ze-ITO. Kwaye ke kukho iteknoloji yokugcina. Imfuno ye-high-density, i-hard-capacity hard drives kunye ne-high-density erasable discs iyaqhubeka nokukhula. Zonke ezi zikhokelele kutshintsho kwimfuno yezinto ekujoliswe kuzo kwishishini lesicelo. Koku kulandelayo, siya kwazisa iinkalo zosetyenziso ezingundoqo ekujoliswe kuzo kunye nendlela yophuhliso ekujoliswe kuyo kule mimandla.
1. IMicroelectronics
Kuwo onke amashishini ezicelo, ishishini le-semiconductor linezona mfuno zingqongqo zomgangatho kwiifilim ekujoliswe kuzo. Ii-Silicon wafers ze-intshi ezili-12 (300 epistaxis) zenziwe ngoku. Ububanzi bonxibelelwano buyancipha. Iimfuno zabavelisi be-silicon wafer kwizinto ezijoliswe kuzo zinkulu, ukucoceka okuphezulu, ulwahlulo oluphantsi kunye neenkozo ezintle, ezifuna izinto ezijoliswe kuzo zibe ne-microstructure engcono. I-crystalline particle diameter kunye nokufana kwezinto ezijoliswe kuyo ziye zaqwalaselwa njengezona zinto zibalulekileyo ezichaphazela izinga lokubekwa kwefilimu.
Xa kuthelekiswa ne-aluminium, ubhedu lunokumelana okuphezulu kwe-electromobility kunye ne-resistiveivity ephantsi, enokuthi ihlangabezane neemfuno zeteknoloji ye-conductor kwi-submicron wiring engaphantsi kwe-0.25um, kodwa izisa ezinye iingxaki: amandla aphantsi okubambelela phakathi kobhedu kunye nezinto eziphilayo eziphakathi. Ngaphezu koko, kulula ukusabela, okukhokelela kwi-corrosion ye-copper interconnect kunye nokuphulwa kwesiphaluka ngexesha lokusetyenziswa kwe-chip. Ukuze ucombulule le ngxaki, umqobo womqobo kufuneka ubekwe phakathi kobhedu kunye ne-dielectric layer.
Izinto ekujoliswe kuzo ezisetyenziswe kwi-barrier layer yoqhagamshelwano lobhedu ziquka i-Ta, i-W, i-TaSi, i-WSi, njl. Kunzima kakhulu ukwenza, kwaye iialloyi ezifana nemolybdenum kunye nechromium ziyaphononongwa njengezinye izinto.
2. Eyomboniso
I-Flat panel display (FPD) ichaphazele kakhulu i-cathode-ray tube (CRT) -esekelwe kwikhompyutheni yekhompyutheni kunye nemarike yethelevishini kwiminyaka, kwaye iya kuqhuba iteknoloji kunye nemfuno yemarike yezinto ezijoliswe kuyo ze-ITO. Kukho iintlobo ezimbini zeethagethi ze-ITO namhlanje. Enye kukusebenzisa i-nanometer state ye-indium oxide kunye ne-tin oxide powder emva kokucoca, enye kukusebenzisa i-indium tin alloy target. Ifilimu ye-ITO inokwenziwa yi-DC reactive sputtering kwithagethi ye-indium-tin alloy, kodwa indawo ekujoliswe kuyo iya ku-oxidize kwaye ichaphazele izinga lokutshiza, kwaye kunzima ukufumana i-alloy target enkulu.
Kule mihla, indlela yokuqala yamkelwa ngokubanzi ukuvelisa imathiriyeli ekujoliswe kuyo ye-ITO, ekhukulisa ukutyabeka ngokusabela kwe-magnetron sputtering. Inesantya sokubeka ngokukhawuleza. Ubunzima befilimu bunokulawulwa ngokuchanekileyo, i-conductivity iphezulu, ukuhambelana kwefilimu kulungile, kwaye ukunamathela kwe-substrate kunamandla. Kodwa into ekujoliswe kuyo kunzima ukwenza, kuba i-idium oxide kunye ne-tin oxide ayidibanisi ngokulula kunye. Ngokuqhelekileyo, i-ZrO2, i-Bi2O3 kunye ne-CeO zikhethwa njengezongezo ze-sintering, kunye nezinto ezijoliswe kuzo ezinoxinano lwe-93% ~ 98% yexabiso lethiyori inokufumaneka. Ukusebenza kwefilimu ye-ITO eyenziwe ngolu hlobo inobudlelwane obuhle kunye nezongezo.
I-blocking resistivity yefilimu ye-ITO efunyenwe ngokusebenzisa izinto ezijoliswe kuyo ifikelela kwi-8.1 × 10n-cm, esondele kwi-resistiveivity yefilimu ye-ITO ecocekileyo. Ubungakanani be-FPD kunye neglasi eqhubayo inkulu kakhulu, kwaye ububanzi beglasi eqhubayo bunokufikelela kwi-3133mm. Ukuze kuphuculwe ukusetyenziswa kwezinto ezijoliswe kuzo, izixhobo ezijoliswe kwi-ITO ezinemilo eyahlukeneyo, ezifana ne-cylindrical shape, ziyaphuhliswa. Ngo-2000, iKomishoni yoCwangciso loPhuhliso lweSizwe kunye neSebe lezeNzululwazi nobuChwepheshe babandakanya iithagethi ezinkulu ze-ITO kwiziKhokelo zeMiba ePhambili yoShishino loLwazi oluMiselwe ngokuPhambili kuPhuhliso.
3. Ukusetyenziswa kogcino
Ngokubhekiselele kwitheknoloji yokugcina, ukuphuhliswa kweediski ezinzima kunye nomthamo omkhulu kudinga inani elikhulu lezinto ezinkulu zefilimu zokungafuni. Ifilimu ehlanganisiweyo ye-CoF~Cu ye-multilayer sisakhiwo esisetyenziswa ngokubanzi sefilimu enkulu yokungafuni. Imathiriyeli yethagethi ye-TbFeCo ye-alloy efunekayo kwidiski yemagnethi isekuphuhliso olungaphaya. I-disc magnetic eyenziwe nge-TbFeCo ineempawu zomthamo omkhulu wokugcina, ubomi obude benkonzo kunye nokuphindaphinda ukungabikho koqhagamshelwano.
I-Antimony germanium telluride esekelwe kwimemori yesigaba sokutshintsha (i-PCM) ibonise amandla amakhulu okurhweba, iba yinxalenye ye-NOR flash memory kunye ne-DRAM yemarike enye iteknoloji yokugcina, nangona kunjalo, ekuphunyezweni kwehliswa ngokukhawuleza omnye wemicelimngeni kwindlela ekhoyo kukunqongophala kokusetha kwakhona. imveliso yangoku inokuthotywa ngakumbi iyunithi etywiniweyo ngokupheleleyo. Ukunciphisa ukusetha kwakhona kwangoku kunciphisa ukusetyenziswa kwamandla ememori, ukwandisa ubomi bebhetri, kunye nokuphucula i-bandwidth yedatha, zonke iimpawu ezibalulekileyo kwi-data-centric yanamhlanje, izixhobo eziphathwayo zabathengi.
Ixesha lokuposa: Aug-09-2022