Kalayan paningkatan paménta pasar, langkung seueur jinis target sputtering terus diropéa. Sababaraha wawuh jeung sababaraha nu teu wawuh ka konsumén. Ayeuna, kami hoyong bagikeun sareng anjeun naon jinis target sputtering magnetron.
Target sputtering ngagaduhan jinis-jinis ieu: target palapis logam sputtering, target palapis sputtering alloy, target palapis sputtering keramik, target sputtering keramik boride, target sputtering keramik karbida, target sputtering keramik fluorida, target sputtering keramik nitrida, target keramik sputtering, sputtering target keramik sputtering , target sputtering keramik silicide, udagan sputtering keramik sulfida, udagan sputtering keramik telluride, udagan keramik séjén, Kromium doped silikon oksida udagan keramik (CR SiO), indium phosphide target (INP), lead arsenide target (pbas), indium arsenide target (InAs).
Magnetron sputtering umumna dibagi jadi dua jenis: DC sputtering jeung RF sputtering. Prinsip parabot DC sputtering basajan, sarta laju na oge gancang nalika sputtering logam. RF sputtering loba dipaké. Salian sputtering data conductive, éta ogé bisa sputter data non-conductive. Dina waktos anu sami, target sputtering ogé ngalaksanakeun sputtering réaktif pikeun nyiapkeun data sanyawa sapertos oksida, nitrida sareng karbida. Upami frékuénsi RF ningkat, éta bakal janten sputtering plasma gelombang mikro. Ayeuna, éléktron cyclotron résonansi (ECR) gelombang mikro sputtering plasma ilahar dipaké.
waktos pos: May-18-2022