Tungsten Siliicide Vaega

Tungsten silicide WSi2 o loʻo faʻaaogaina e fai ma mea eletise eletise i microelectronics, faʻapipiʻi i luga o uaea polysilicon, faʻapipiʻi faʻamaʻi faʻamaʻi ma faʻapipiʻi uaea tetee. Tungsten silicide e faʻaaogaina e fai ma mea faʻafesoʻotaʻi i microelectronics, faʻatasi ai ma le resistivity o le 60-80μΩcm. E faia ile 1000°C. E masani ona faʻaaogaina e fai ma shunt mo laina polysilicon e faʻateleina ai lona faʻamalosi ma faʻateleina le saoasaoa o faailo. O le tungsten Silicide layer e mafai ona saunia e ala i vailaʻau faʻapipiʻi ausa, e pei o le faʻaogaina o ausa. Fa'aaoga le monosilane po'o le dichlorosilane ma le tungsten hexafluoride e fai ma kesi mata. O le ata na teuina e le o se stoichiometric ma e manaʻomia le faʻamaʻi ina ia suia i se foliga stoichiometric sili atu le faʻaogaina.

Tungsten silicide e mafai ona suia le ata muamua tungsten. Tungsten silicide e faʻaaogaina foi e fai ma pa puipui i le va o le silicon ma isi metala.

Tungsten silicide e taua tele foi i faiga microelectromechanical, e aofia ai le silicide tungsten e masani ona faʻaaogaina o se ata manifinifi mo le gaosiga o microcircuits. Mo lenei faʻamoemoe, o le tungsten silicide film e mafai ona faʻapipiʻiina plasma e faʻaaoga ai, mo se faʻataʻitaʻiga, silicide.

Rich Special Materials e fa'apitoa i le Gauaina o Sputtering Target ma e mafai ona gaosia Tungsten Silicidefasie tusa ai ma fa'amatalaga a tagata fa'atau. Mo nisi fa'amatalaga, fa'amolemole fa'afeso'ota'i matou.