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O le a le mea e fa'atatau i le sputter

Magnetron sputtering coating o se auala fou e faʻapipiʻi ai le ausa, faʻatusatusa i le auala muamua e faʻafefe ai, o ona tulaga lelei i le tele o itu e matua ofoofogia lava. I le avea ai o se tekinolosi matua, ua faʻaaogaina le magnetron sputtering i le tele o vaega.

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  Fa'atonuga o le fa'aosoina o le Magnetron:

O se fanua maneta orthogonal ma eletise eletise ua faaopoopo i le va o le sputtered taula taulaʻi (cathode) ma le anode, ma le kasa inert manaomia (masani Ar kasa) ua faatumuina i le potu gaogao maualuga. O le maneta tumau e fausia ai le 250-350 gaus maneta i luga o le mea o loʻo faʻamoemoeina, ma o le faʻaogaina o le eletise eletise o loʻo faʻapipiʻiina ma le eletise eletise maualuga. I lalo o le aafiaga o le fanua eletise, Ar kasa ionization i ions lelei ma electrons, taulaʻiga ma o loo i ai ni uunaiga le lelei, mai le taulaʻiga mai le pou e ala i le aafiaga o le maneta ma le galue kasa ionization ono faateleina, fausia se plasma density maualuga latalata i le cathode, Ar ion i lalo o le gaioiga a lorentz malosi, faatelevave e lele i luga o le sini, pomu luga o le sini i se saoasaoa maualuga, O atoms sputtered i luga o le taulaiga mulimuli i le mataupu faavae o le liua malosi ma lele ese mai luga o le sini. ma le malosi kinetic maualuga i le substrate deposition film.

Magnetron sputtering e masani ona vaevaeina i ni ituaiga se lua: DC sputtering ma RF sputtering. O le mataupu faavae o le DC sputtering meafaigaluega e faigofie, ma le fua faatatau e vave pe a sputtering uamea. O le faʻaogaina o le RF sputtering e sili atu le lautele, faʻaopoopo i le faʻafefeina o mea faʻataʻitaʻi, ae faʻapea foʻi le faʻaogaina o mea e le faʻaogaina, ae faʻapea foʻi ma le faʻaogaina o le faʻaogaina o le oxides, nitrides ma carbide ma isi mea faʻapipiʻi. Afai e fa'atuputeleina le fa'atuputeleina o le RF, e avea ma microwave plasma sputtering. I le taimi nei, e masani ona faʻaaogaina le faʻaogaina o le microwave plasma sputtering (ECR).

  Magnetron sputtering coating mea fa'atatau:

u'amea fa'amea fa'atatau, fa'apipi'i u'amea fa'apipi'i mea fa'apipi'i, mea fa'apipi'i fa'apipi'i sima, mea fa'apipi'i fa'amea taula'i, carbide sima sputtering mea taula'i, fluoride sima sputtering mea fa'atatau, nitride ceramic sputtering mea fa'atatau, oxide sima sima, selenide sima mea taula'i silicide sima sputtering mea autu, sulfide sima sputtering mea sini, Telluride ceramic sputtering target, isi sima sini, chromium-doped silicon oxide sima sini (CR-SiO), indium phosphide target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).


Taimi meli: Au-03-2022