O le taimi nei ua sili atu ma sili atu tagata faʻaoga malamalama i ituaiga o sini mao ana talosaga, ae atonu e le o manino lelei le vaevaega. Ia tatouRSM inisinia faasoa atu ia te oenisi induction o taula'iga fa'amaneta fa'amaneta.
Sputtering sini: u'amea u'amea fa'alava fa'alava, u'amea fa'apipi'i fa'alava fa'alava, sima sima fa'apipi'i fa'alava, boride sima sputtering sini, carbide sima sputtering taula'i, fluoride sima sputtering sini, nitride sima sputtering sini, oxide sima sima siuefu sini sini, sulfide sini sima sputtering, telluride ceramic sputtering target, isi sima sini, Chromium doped silicon oxide ceramic target (CR SiO), indium phosphide target (INP), lead arsenide target (pbas), indium arsenide target (InAs).
Magnetron sputtering e masani ona vaevaeina i ni ituaiga se lua: DC sputtering ma RF sputtering. O le mataupu faavae o le DC sputtering meafaigaluega e faigofie, ma lona fua faatatau e vave foi pe a sputtering uamea. RF sputtering e faʻaaogaina lautele. I le faaopoopo atu i le sputtering conductive faamatalaga, e mafai foi sputter non-conductive faamatalaga. E mafai fo'i ona fa'aoga le fa'amoemoe mo le fa'aoso fa'agasolo e saunia ai fa'amaumauga tu'ufa'atasi e pei o oxides, nitride ma carbide. Afai e faʻateleina le RF, o le a avea ma microwave plasma sputtering. I le taimi nei, e masani ona faʻaaogaina le faʻaogaina o le microwave plasma sputtering electron cyclotron resonance (ECR).
Taimi meli: Me-26-2022