Faatasi ai ma le faʻateleina o manaʻoga maketi, o le tele ma le tele o ituaiga o sputtering sini e faʻafouina pea. O nisi e masani ma o nisi e le masani ai tagata faʻatau. I le taimi nei, matou te fia fa'asoa atu ia te oe po'o a ituaiga o fa'amaneta fa'amaneta.
Sputtering target e iai ituaiga nei: u'amea u'amea fa'apipi'i fa'alava, u'amea fa'apipi'i fa'alava fa'apipi'i, sima sima fa'apipi'i fa'alava, boride sima sima fa'ama'i, carbide sima sima fa'asao, fluoride sima fa'a'afu fa'amau, nitride sima sima fa'amau, selenide sima sima. , silicide sima sputtering sini, sulfide ceramic sputtering target, telluride ceramic sputtering target, isi sima sini, Chromium doped silicon oxide ceramic target (CR SiO), indium phosphide target (INP), lead arsenide target (pbas), indium arsenide target (InAs).
Magnetron sputtering e masani ona vaevaeina i ni ituaiga se lua: DC sputtering ma RF sputtering. O le mataupu faavae o le DC sputtering meafaigaluega e faigofie, ma lona fua faatatau e vave foi pe a sputtering uamea. RF sputtering e faʻaaogaina lautele. I le faaopoopo atu i le sputtering conductive faamatalaga, e mafai foi sputter non-conductive faamatalaga. I le taimi lava e tasi, o le sputtering target o loʻo faʻatinoina foʻi le faʻaogaina o le sputtering e saunia ai faʻamaumauga faʻapipiʻi e pei o oxides, nitrides ma carbide. Afai e faʻateleina le RF, o le a avea ma microwave plasma sputtering. I le taimi nei, e masani ona faʻaaogaina le faʻaogaina o le microwave plasma sputtering electron cyclotron resonance (ECR).
Taimi meli: Me-18-2022