Tungsten Silicide

Tungsten siliside WSi2 ikoreshwa nkibikoresho byamashanyarazi muri microelectronics, guhunga insinga za polysilicon, anti-okiside hamwe ninsinga zirwanya. Tungsten siliside ikoreshwa nkibikoresho byo guhuza mikorobe, hamwe na 60-80μΩcm. Yakozwe kuri 1000 ° C. Ubusanzwe ikoreshwa nka shunt kumirongo ya polysilicon kugirango yongere imikorere yayo kandi yongere ibimenyetso byihuta. Tungsten Silicide layer irashobora gutegurwa no guhumeka imyuka ya chimique, nko guhumeka. Koresha monosilane cyangwa dichlorosilane na tungsten hexafluoride nka gaze yibikoresho. Filime yabitswe ntabwo ari stoichiometric kandi isaba annealing kugirango ihindurwe muburyo bwa stoichiometric.

Tungsten silicide irashobora gusimbuza firime ya tungsten mbere. Tungsten silicide nayo ikoreshwa nkurwego rwa bariyeri hagati ya silicon nibindi byuma.

Tungsten siliside nayo ifite agaciro kanini muri sisitemu ya microelectromechanical, muri yo harimo tungsten siliside ikoreshwa cyane nka firime yoroheje yo gukora microcircuits. Kubwiyi ntego, firime ya tungsten silicide irashobora kuba plasma ikoresheje, urugero, siliside.

Ibikoresho Byihariye Byihariye mu Gukora Intego ya Sputtering kandi bishobora kubyara Tungsten Silicideibiceukurikije ibisobanuro byabakiriya. Kubindi bisobanuro, nyamuneka twandikire.