Intego ya polysilicon niyihe

Polysilicon nigikoresho cyingenzi cyo gusohora ibintu. Gukoresha uburyo bwa magnetron uburyo bwo gutegura SiO2 nizindi firime zoroshye birashobora gutuma ibikoresho bya matrix bigira optique nziza, dielectric na ruswa irwanya ruswa, ikoreshwa cyane mugukoraho, gukora optique nizindi nganda.

Igikorwa cyo guta kristu ndende ni ukumenya icyerekezo cya silikoni yamazi kuva hasi kugeza hejuru buhoro buhoro mugucunga neza ubushyuhe bwumuriro mumurima ushyushye w itanura rya ingot no gukwirakwiza ubushyuhe bwibikoresho byo gutwika ubushyuhe, hamwe na gukomera birebire bya kristu ni 0.8 ~ 1.2cm / h. Muri icyo gihe, mugihe cyo gukomera kwerekezo, ingaruka zo gutandukanya ibintu byibyuma mubikoresho bya silikoni zirashobora kugerwaho, ibyinshi mubyuma birashobora kwezwa, kandi hashobora gushirwaho imiterere yintete ya silikoni ya silikoni.

Gutera polysilicon nabyo bigomba gukopororwa nkana mugikorwa cyo kubyaza umusaruro, kugirango uhindure ubwinshi bwimyanda yakira muri silicon yashonga. Dopant nyamukuru yubwoko bwa p-polysilicon munganda ni silicon boron master alloy, aho boron igera kuri 0.025%. Umubare wa doping ugenwa nintego yo kurwanya silicon wafer. Kurwanya neza ni 0.02 ~ 0.05 Ω • cm, hamwe na boron ihuye ni hafi 2 × 1014cm-3。 Ariko, coefficente yo gutandukanya boron muri silicon ni 0.8, izerekana ingaruka zimwe zo gutandukanya inzira yo gukomera, ni, boron element ikwirakwizwa murwego rwo hejuru rwerekezo rwerekezo rwa ingot, kandi kurwanya biragenda bigabanuka kuva hasi kugeza hejuru ya ingot.