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What is the production method of silicon target?

Silicon sputtering target is made of high purity silicon for sputtering coating process raw materials, silicon sputtering target has high purity characteristics, purity can reach 99.999% and above. The physical properties are stable, the density is about 2.33g/cm³, the melting point is about 1414°C, and the heat conductivity is good. It has good crystal quality and can be prepared by czochralase method and zone melting method. It is widely used in many fields such as semiconductor and optical devices.
Silicon sputtering targets include high purity silicon targets, polycrystalline silicon targets, monocrystalline silicon targets and doped silicon targets. The purity, shape (such as round target, square target), size and doping elements of the sputtering target can be customized according to specific needs. ‌

What is the production method of silicon target?

The production method of silicon target mainly includes the following key steps:
‌1. Raw material preparation ‌ :
The first step in silicon target production is to prepare high purity silicon materials. In general, silicon raw materials with a purity above 99.999% (5N) are selected to reduce the impact of impurities on subsequent processes and final product performance. These silicon materials are generally prepared by the calcium carbide process, that is, finely ground quartz sand and coke powder are mixed in a certain proportion and undergo high-temperature reduction reaction in an electric furnace to obtain high-purity silicon ingots ‌.

2.Crystal growth ‌ :

Silicon ingot, as the raw material of silicon target, needs crystal growth. This process usually uses the Czochralski CZ method, which puts silicon into a high-temperature molten silicon melt and gradually grows into cuboid crystals by rotating and stretching it. In this process, factors such as temperature, tensile speed and atmosphere need to be strictly controlled to ensure the quality and purity of the crystal.

3. Cutting & Machining ‌ :

After the crystal growth is completed, the silicon crystal needs to be cut and processed to get the desired shape and size of the silicon target. This step includes cutting, grinding, polishing and other processes to ensure the surface flatness and dimensional accuracy of the silicon target. For silicon targets with specific shapes, such as racetrack silicon targets, special cutting and processing methods are also required, such as using water knife to cut blanks according to the profile, and then using diamond grinding wheel to machined the side surface ‌.

4. Welding and assembly ‌

In some cases, silicon targets may need to be welded and assembled with backplanes or other components. For example, the welding surface of the silicon target is treated with nickel plating and copper wire welding, then the target is placed on a heating platform, the solder is fully soaked in the welding surface under pressure, and finally the silicon target is brazed with the backplane. After cooling, ‌ is finished.

5.Quality Control & inspection ‌ :

Every step of the production process requires quality control and inspection to ensure that the quality and performance of the silicon target meet relevant standards and customer requirements. This includes purity testing, structure testing, surface quality testing, etc.

 


Post time: Dec-16-2024