Saiki luwih akeh pangguna ngerti jinis target lanaplikasi kasebut, nanging bagean kasebut bisa uga ora cetha banget. Saiki ayoRSM engineer nuduhake karo sampeyansawetara induksi saka target sputtering magnetron.
Target sputtering: target lapisan sputtering logam, target lapisan sputtering alloy, target sputtering lapisan keramik, target sputtering keramik boride, target sputtering keramik karbida, target sputtering keramik fluoride, target sputtering keramik nitrida, target keramik oksida, target sputtering keramik selenide, sputtering keramik silide target, sulfida target sputtering keramik, target sputtering keramik telluride, target keramik liyane, target keramik silikon oksida kromium (CR SiO), target indium phosphide (INP), target arsenide lead (pbas), target indium arsenide (InAs).
Magnetron sputtering umume dipérang dadi rong jinis: DC sputtering lan RF sputtering. Prinsip peralatan DC sputtering prasaja, lan tingkat uga cepet nalika sputtering logam. RF sputtering digunakake akeh. Saliyane sputtering data konduktif, uga bisa sputter data non-konduktif. Target sputtering uga bisa digunakake kanggo sputtering reaktif kanggo nyiapake data senyawa kayata oksida, nitrida lan karbida. Yen frekuensi RF mundhak, bakal dadi sputtering plasma gelombang mikro. Saiki, sputtering plasma gelombang mikro elektron cyclotron resonance (ECR) umume digunakake.
Wektu kirim: Mei-26-2022