Yana za a iya raba zuwa DC magnetron sputtering da RF magnetron sputtering.
Hanyar sputter na DC yana buƙatar cewa maƙasudin zai iya canja wurin ingantaccen cajin da aka samu daga tsarin ion bombardment zuwa cathode a cikin kusanci da shi, sa'an nan kuma wannan hanyar za ta iya watsa bayanan mai gudanarwa kawai, wanda bai dace da bayanan rufi ba, saboda ion cajin a saman ba za a iya neutralized a lokacin da bombarding da rufi manufa, wanda zai haifar da karuwa da m a kan manufa surface, kuma kusan duk amfani da ƙarfin lantarki da aka yi amfani da manufa, don haka da chances na ion. hanzari da ionization tsakanin sanduna biyu za a rage, ko ma ba za a iya ionized, Yana kaiwa ga gazawar na ci gaba da fitarwa, ko da sallama katsewa da sputtering katsewa. Don haka, dole ne a yi amfani da sputtering mitar rediyo (RF) don hana maƙasudi ko maƙasudin da ba na ƙarfe ba tare da mummunan aiki.
Tsarin sputtering ya ƙunshi hadaddun hanyoyin watsawa da hanyoyin canja wurin makamashi daban-daban: na farko, ɓangarorin abubuwan da suka faru sun yi karo da ƙarfi tare da atom ɗin da aka yi niyya, kuma wani ɓangare na makamashin motsa jiki na abubuwan da suka faru za'a watsa su zuwa ga atom ɗin da aka yi niyya. Ƙarfin motsa jiki na wasu atom ɗin da aka yi niyya ya wuce yuwuwar shingen da wasu atom ɗin ke kewaye da su (5-10ev na ƙarfe), sannan kuma a fitar da su daga lattice lattice ɗin don samar da atom ɗin waje, da kuma ƙara maimaita karo tare da atom ɗin kusa. , wanda ya haifar da gamuwa da hadari. Lokacin da wannan karon da aka yi karo da shi ya kai saman abin da ake niyya, idan makamashin atom din da ke kusa da saman abin da ake nufi ya fi karfin daurin daurin sama (1-6ev na karafa), wadannan kwayoyin zarra za su rabu da saman abin da ake nufi. kuma shigar da vacuum.
Tufafin yatsa shine ƙwarewar yin amfani da ɓangarorin da aka caje don jefa bama-bamai a saman maƙasudin a cikin injin daɗaɗɗe don sanya barbashi da aka yi bama-bamai su taru akan ƙasa. Yawanci, ana amfani da fitar da iskar gas mai ƙarancin ƙarfi don haifar da ions da ke faruwa. The cathode manufa da aka sanya daga shafi kayan, da substrate da ake amfani da matsayin anode, 0.1-10pa argon ko wasu inert iskar gas da aka gabatar a cikin injin jam'iyya, da kuma haske fitarwa faruwa a karkashin mataki na cathode (manufa) 1-3kv DC korau high. irin ƙarfin lantarki ko 13.56 MHz RF. Ionized argon ions suna jefa bama-bamai a saman abin da aka sa a gaba, suna haifar da atom ɗin da aka yi niyya su fantsama kuma su taru a kan ma'aunin don samar da fim na bakin ciki. A halin yanzu, akwai hanyoyi da yawa na sputtering, musamman ciki har da sputtering na biyu, sakandare ko quaternary sputtering, magnetron sputtering, sputtering manufa, RF sputtering, son zuciya sputtering, asymmetric sadarwa RF sputtering, ion katako sputtering da amsa sputtering.
Saboda kwayoyin zarra da aka fantsama suna fantsama bayan sun yi musayar makamashin motsa jiki tare da ions masu inganci tare da dubun wutar lantarkin lantarki, kwayoyin zarra suna da makamashi mai yawa, wanda ke da amfani wajen inganta karfin tarwatsa kwayoyin halitta yayin da ake tarawa, da inganta kyawun tsarin tarawa, da yin tsari. fim ɗin da aka shirya yana da ƙarfi mai ƙarfi tare da substrate.
A lokacin sputtering, bayan da iskar gas da aka ionized, da iskar gas tashi zuwa manufa da alaka da cathode karkashin aikin lantarki filin, da kuma electrons tashi zuwa kasa bango rami da substrate. Ta wannan hanyar, a ƙarƙashin ƙananan ƙarfin lantarki da ƙananan matsa lamba, adadin ions ƙananan ƙananan kuma ikon sputtering na manufa yana da ƙasa; A high ƙarfin lantarki da kuma high matsa lamba, ko da yake mafi ions iya faruwa, da electrons tashi zuwa substrate da high makamashi, wanda yake da sauki don zafi da substrate har ma da sakandare sputtering, shafi ingancin fim. Bugu da kari, yuwuwar karo tsakanin kwayoyin atom da iskar gas a cikin tsarin tashi zuwa cikin ma'aunin kuma yana karuwa sosai. Sabili da haka, za a watsar da shi zuwa ga dukan rami, wanda ba kawai zai ɓata manufa ba, amma kuma ya gurɓata kowane Layer yayin shirye-shiryen fina-finai masu yawa.
Domin magance gazawar da ke sama, an haɓaka fasahar sputtering DC magnetron a cikin 1970s. Yana shawo kan gazawar low cathode sputtering kudi da kuma karuwa da substrate zafin jiki lalacewa ta hanyar electrons. Saboda haka, an haɓaka shi cikin sauri kuma ana amfani da shi sosai.
Ka'idar ita ce kamar haka: a cikin magnetron sputtering, saboda motsin electrons suna ƙarƙashin ikon Lorentz a cikin filin maganadisu, motsin su zai kasance mai raɗaɗi ko ma karkace motsi, kuma hanyar motsin su zai yi tsawo. Sabili da haka, yawan haɗuwa tare da kwayoyin gas masu aiki yana ƙaruwa, don haka yawan ƙwayar plasma ya karu, sa'an nan kuma an inganta yawan sputtering na magnetron, kuma yana iya aiki a ƙarƙashin ƙananan ƙarfin wutar lantarki da matsa lamba don rage halayen gurɓataccen fim; A gefe guda kuma, yana inganta ƙarfin kuzarin atom ɗin da ke faruwa a saman ƙasa, don haka za a iya inganta ingancin fim ɗin sosai. A lokaci guda kuma, lokacin da electrons da ke rasa kuzari ta hanyar karo da yawa sun isa ga anode, sun zama electrons masu ƙarancin kuzari, sannan substrate ba zai yi zafi ba. Saboda haka, magnetron sputtering yana da abũbuwan amfãni daga "high gudun" da "ƙananan zafin jiki". Lalacewar wannan hanyar ita ce ba za a iya shirya fim ɗin insulator ba, kuma filin maganadisu marar daidaituwa da aka yi amfani da shi a cikin lantarki na magnetron zai haifar da rashin daidaituwa na maƙasudin, wanda ke haifar da ƙarancin amfani da manufa, wanda yawanci shine 20% - 30 kawai. %.
Lokacin aikawa: Mayu-16-2022